january 2004 ? 2004 fairchild semiconductor corporation fdc699p rev c2 (w) fdc699p p-channel 2.5v powertrench ? mosfet general description this p-channel 2.5v specified mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v ? 12v). applications ? battery management ? load switch ? battery protection features ? ?7 a, ?20 v r ds(on) = 22 m ? @ v gs = ?4.5 v r ds(on) = 30 m ? @ v gs = ?2.5 v ? high performance trench technology for extremely low r ds(on) ? fast switching speed ? flmp supersot-6 package: enhanced thermal performance in industry-standard package size supersot-6 tm flmp s s s g s s absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 12 v i d drain current ? continuous (note 1a) ?7 a ? pulsed ?40 p d power dissipation (note 1a) 2 (note 1b) 1.5 w t j , t stg operating and storage junction temperature range ?55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 60 c/w (note 1b) 111 r jc thermal resistance, junction-to-case 0.5 package marking and ordering information device marking device reel size tape width quantity .699 fdc699p 7?? 8mm 3000 units fdc699p 3 2 1 4 5 6 bottom drain
fdc699p rev c2 (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ? bv dss ? t j breakdown voltage temperature coefficient i d = ? 250 a, referenced to 25 c ?12 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gss gate?body leakage v gs = 12 v, v ds = 0 v 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.6 ?0.9 ?1.5 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = ? 250 a, referenced to 25 c 3 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?7 a v gs = ?2.5 v, i d = ?6 a v gs = ?4.5 v, i d = ?7 a, t j =125 c 14 21 17 22 30 31 m ? g fs forward transconductance v ds = ?5 v, i d = ?7 a 30 s dynamic characteristics c iss input capacitance 2640 pf c oss output capacitance 560 pf c rss reverse transfer capacitance v ds = ? 10 v, v gs = 0 v, f = 1.0 mhz 280 pf r g gate resistance v gs = 15 mv, f = 1.0 mhz 3.6 ? switching characteristics (note 2) t d(on) turn?on delay time 16 28 ns t r turn?on rise time 11 19 ns t d(off) turn?off delay time 75 120 ns t f turn?off fall time v dd = ?10 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 41 65 ns q g total gate charge 27 38 nc q gs gate?source charge 5 nc q gd gate?drain charge v ds = ?10 v, i d = ?7 a, v gs = ?5 v 7 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?1.6 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?1.6 a (note 2) ?0.7 ?1.2 v t rr reverse recovery time 28 ns q rr reverse recovery charge i f = ?7 a, d if /d t = 100 a/s 14 nc notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 60c/w when mounted on a 1in 2 pad of 2 oz copper b) 111c/w when mounted on a minimum pad of 2 oz copper scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fdc699p
fdc699p rev c2 (w) dimensional outline and pad layout bottom view top view recommended landing pattern fdc699p
fdc699p rev c2 (w) typical characteristics 0 10 20 30 40 00.511.522.5 -v ds , drain-source voltage (v) -i d , drain current (a) -2.5v v gs = -4.5v -2.0v -3.0v -3.5v 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 0 10203040 -i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = -2.0v -3.5v -4.5v -4.0v -3.0v -2.5v figure 1. on-region characteristics. fi gure 2. on-resistance variation with drain current and gate voltage. 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = -7a v gs = -4.5v 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0.045 0.05 12345 -v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = -3.5a t a = 125 o c t a = 25 o c figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0 10 20 30 40 0.5 1 1.5 2 2.5 3 -v gs , gate to source voltage (v) -i d , drain current (a) t a = 125 o c 25 o c -55 o c v ds = -5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , body diode forward voltage (v) -i s , reverse drain current (a) t a = 125 o c 25 o c -55 o c v gs = 0v figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdc699p
fdc699p rev c2 (w) typical characteristics 0 1 2 3 4 5 0 5 10 15 20 25 30 q g , gate charge (nc) -v gs , gate-source voltage (v) i d = -7a v ds = -5v -15v -10v 0 500 1000 1500 2000 2500 3000 3500 4000 0 5 10 15 20 -v ds , drain to source voltage (v) capacitance (pf) c rss c oss f = 1mhz v gs = 0 v c iss figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) dc 10s 100ms r ds(on) limit v gs = -4.5v single pulse r ja = 111 o c/w t a = 25 o c 10ms 1ms 1s 100s 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r ja = 111c/w t a = 25c figure 9. maximum safe operating ar ea. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 111 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization perf ormed using the conditions described in note 1b. transient thermal response will change depending on the circuit board design. fdc699p
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? fact quiet series? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? implieddisconnect? rev. i7 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos tm ensigna tm fact? pop? power247? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise? programmable active droop?
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> fdc699p p-channel 2.5v power mosfet mosfet recommend fdc699p_f077 general description back to top features back to top applications contents ? general description ? features ? applications ? product status/pricing/packaging ? order samples ? models ? qualification support this p-channel 2.5v specified mosfet is a rugged gate version of fairchild semiconductor?s advanced powertrench process. it has been optimized for power management applications with a wide range of gate drive voltage (2.5v - 12v). z -7 a, -20v r ds(on) = 22 mohm @ vgs = -4.5 v r ds(on) = 30 mohm @ vgs = -2.5 v z high performance trench technology for extremely low r ds(on) z fast switch ing speed z flmp supersot-6 package: enhan ced thermal performance in industry-standard package size z battery management z load switch z battery protection datasheet download this datasheet e - mail this datasheet this page print version this product use in fetbench a nalysis related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 3 product folder - fairchild p/n fdc699p - p-channel 2.5v power mo sfet mosfet recommend fdc699p _ f077 16-au g -2007 mhtml:file://c:\temp\fdc699p _ f077.mht
product status/pricing/packaging back to top models back to top qualification support click on a product for detailed qualification data back to top back to top product product status pb-free status pricing* package type leads packing method package marking convention** fdc699p not recommended for new designs $0.45 ssot-6 flmp 6 tape reel line 1: &e& y (binary calendar year coding) line 2: .699 fdc699p_f077 full production $0.57 ssot-6 flmp 6 tape reel line 1: &e& y (binary calendar year coding) line 2: .699 * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributo r to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fdc699p is available. click here for more information . package & leads condition temperature range software version revision date pspice ssot-6 flmp-6 electrical 25c to 125c orcad 9.1 jan 6, 2004 product fdc699p fdc699p_f077 pa g e 2 of 3 product folder - fairchild p/n fdc699p - p-channel 2.5v power mo sfet mosfet recommend fdc699p _ f077 16-au g -2007 mhtml:file://c:\temp\fdc699p _ f077.mht
? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 3 of 3 product folder - fairchild p/n fdc699p - p-channel 2.5v power mo sfet mosfet recommend fdc699p _ f077 16-au g -2007 mhtml:file://c:\temp\fdc699p _ f077.mht
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